Electroless plating method

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S677000, C438S686000, C438S687000, C427S537000

Reexamination Certificate

active

06841476

ABSTRACT:
A metallic film (2) made of a metal on which an electroless plating film can be deposited is formed on part of the surface of a thermoelectric semiconductor (8) which is an object to be plated, made of a constituent material to which an electroless plating can not be directly applied, and subsequently, the thermoelectric semiconductor (8) is dipped in an electroless plating bath, whereupon a conductive film (3) having a uniform thickness, made up of an electroless plating film, is formed on the entire surface of the thermoelectric semiconductor (8) containing the surface of the metallic film (2).

REFERENCES:
patent: 5462897 (1995-10-01), Baum et al.
patent: 6403168 (2002-06-01), Meyer et al.
patent: 6607981 (2003-08-01), Takahashi et al.
patent: 0 887 869 (1998-12-01), None
patent: 1103297 (1968-02-01), None
patent: 62-93391 (1987-04-01), None
patent: 7-145485 (1995-06-01), None
patent: 8-3785 (1996-01-01), None
patent: 11-186619 (1999-07-01), None
Copy of European Patent Office Communication including Search Report for corresponding European Patent Office Application 00961188 dated Jan. 28, 2003.

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