Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-01-11
2005-01-11
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S677000, C438S686000, C438S687000, C427S537000
Reexamination Certificate
active
06841476
ABSTRACT:
A metallic film (2) made of a metal on which an electroless plating film can be deposited is formed on part of the surface of a thermoelectric semiconductor (8) which is an object to be plated, made of a constituent material to which an electroless plating can not be directly applied, and subsequently, the thermoelectric semiconductor (8) is dipped in an electroless plating bath, whereupon a conductive film (3) having a uniform thickness, made up of an electroless plating film, is formed on the entire surface of the thermoelectric semiconductor (8) containing the surface of the metallic film (2).
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Copy of European Patent Office Communication including Search Report for corresponding European Patent Office Application 00961188 dated Jan. 28, 2003.
Berry Renee R.
Nelms David
Westerman Hattori Daniels & Adrian LLP
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