Electroless copper employing hypophosphite as a reducing agent

Details Electroless copper employing hypophosphite as a reducing agent Electroless copper employing hypophosphite as a reducing agent

1998-12-17

2000-04-04

Talbot, Brian K.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

427 97, 427 98, 427304, 427305, 427306, 427437, 4274431, 438675, H01L 2144, B05D 512

Patent

active

060461071

ABSTRACT:
Method and baths for electroless depositing Cu on a semiconductor chip using four preferred Cu electroless baths. All four preferred electroless baths use hypophosphite as a reducing agent. The 4 baths use the following mediators (1) Nickel sulfate, (2) Pd Sulfate (3) Co Sulfate (4) Fe Sulfite, and complexing agents (Na Citrite, Boric Acid, Ammonium Sulfite). The baths can operate at a pH between 8 and 10. The invention forms high purity Cu interconnects having adequate step coverage to form in a hole having an aspect ratio greater than 2.7 to 1.

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