Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-02-08
2005-02-08
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C438S694000, C438S745000, C438S747000
Reexamination Certificate
active
06852630
ABSTRACT:
A system for optionally depositing or etching a layer of a wafer includes mask plate opposed to the wafer with the mask plate having a plurality of openings that transport a solution to the wafer. An electrode assembly has a first electrode member and a second electrode member having channels that operatively interface a peripheral and center part of the wafer. The channels transport the solution to the mask.
REFERENCES:
patent: 6103096 (2000-08-01), Datta et al.
patent: 6176992 (2001-01-01), Talieh
patent: 6251238 (2001-06-01), Kaufman et al.
patent: 6261426 (2001-07-01), Uzoh et al.
patent: 20020108861 (2002-08-01), Emesh et al.
Basol Bulent M.
Talieh Homayoun
Uzoh Cyprian
Yakupoglu Halit N.
ASM Nutool, Inc.
Knobbe Martens & Olson Bear LLP.
Norton Nadine G.
Tran Binh X.
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