Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-30
2006-05-30
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S675000, C438S676000
Reexamination Certificate
active
07052991
ABSTRACT:
An electrodeposition film forming method includes forming an electrodeposited film of an electrodeposition coating material having good thermal fluidity by a first electrodeposition; forming an electrodeposition film in a very small through-hole provided on a conductive or semiconductive substrate; removing electrodeposited film at an opening portion of the through-hole under a wet-coated condition; and hardening the electrodeposition film to obtain a flat portion other than the opening portion. Then, a second electrodeposition film of an electrodeposition coating material having good thermal fluidity is formed around the opening portion and is hardened to coat uncoated portions of the opening portion remaining after the first deposition. Accordingly, a flat inner surface of the through-hole is obtained, any exposed portions of an underlayer at the opening of the through-hole are covered and the opening of the through-hole is maintained.
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patent: 5948232 (1999-09-01), Murphy et al.
patent: 6334965 (2002-01-01), Singh et al.
patent: 6552555 (2003-04-01), Nuytkens et al.
patent: 2002/0083858 (2002-07-01), MacDiarmid et al.
patent: 06-57496 (1994-03-01), None
Canon Kabushiki Kaisha
Everhart Caridad
Fitzpatrick ,Cella, Harper & Scinto
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