Electrodepositing a metal in integrated circuit applications

Details Electrodepositing a metal in integrated circuit applications Electrodepositing a metal in integrated circuit applications

2011-03-08

2011-03-08

Roman, Angel (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S674000, C438S675000, C438S677000, C438S678000, C257SE21495, C257SE21476

Reexamination Certificate

active

07902062

ABSTRACT:
A method is described in which a contact hole (18) to an interconnect (14) in an insulating layer (16) is fabricated. A barrier layer (20) is subsequently applied. Afterward, a photoresist layer (30) is applied, irradiated and developed. With the aid of a galvanic method, a copper contact (32) is then produced in the contact hole (18). Either the barrier layer (20) or an additional boundary electrode layer (22) serves as a boundary electrode in the galvanic process. Critical metal contaminations are minimized in production.

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