Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-08-22
2006-08-22
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S079000, C257S086000, C257S087000, C257S094000, C257S101000, C257S102000, C257S103000, C257S918000, C257S660000, C257S661000, C257S663000, C257S930000
Reexamination Certificate
active
07095042
ABSTRACT:
A semiconductor light emitting device including a p-type electrode structure and having a low contact resistance and high reflectance is provided. The semiconductor light emitting device includes a transparent substrate, an electron injection layer having first and second regions on the transparent substrate, an active region formed on the first region, a hole injection layer on the active layer, a first electrode structure on the second region, and a second electrode structure on the hole injection layer, and includes a first layer including nitrogen and a second layer including Pd. The low contact resistance and high reflectance can be obtained by forming a trivalent compound layer composed of Pd—Ga—N at an interface between the hole injection layer, which is composed of p-GaN, and the metal layer of the p-type electrode.
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Kim Mi-yang
Kwak Joon-seop
Samsung Electronics Co,. Ltd.
Soward Ida M.
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