Electrode structure of semiconductor device for use in GaAs comp

Details Electrode structure of semiconductor device for use in GaAs comp Electrode structure of semiconductor device for use in GaAs comp

1992-09-08

1993-11-09

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257748, 257757, 257763, 257764, 257768, 257769, 257781, H01L 2348, H01L 2946, H01L 2954, H01L 2962

Patent

active

052606031

ABSTRACT:
A semiconductor device having a GaAs substrate and an ohmic electrode. An electrode pad is on part of the ohmic electrode and on part of the GaAs substrate outside the ohmic electrode. The electrode pad includes a first platinum film, a titanium film, a second platinum film, and a gold film which are sequentially deposited on one another. The first platinum film is thinner than each of the titanium film, second platinum film and gold film.

REFERENCES:
patent: 4188636 (1980-02-01), Sato et al.
patent: 4197551 (1980-04-01), Adlerstein

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