Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-08-16
2011-08-16
Parker, Ken A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S534000, C257SE27016, C257SE27048, C257SE21647
Reexamination Certificate
active
07999350
ABSTRACT:
After a fabrication process intended to miniaturize semiconductor devices, a surface area of a stack capacitor in a random access memory (RAM) is significantly reduced and capacity thereof is thus decreased, which in turn causes the capacitor not able to function properly. The present invention provides a composite lower electrode structure consisting of an exterior annular pipe and a central pillar having concave-convex surfaces to increase a surface area of the capacitor within a limited memory cell so as to enhance the capacity. To reinforce intensity of a structure of the capacitor, the exterior annular pipe has an elliptic radial cross section and a thicker thickness along a short axis direction.
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“1st Office Action of China counterpart application”, issued on Jan. 22, 2010, p. 1-p. 4.
Chen Wen-Hwa
Chen Yun-Chiao
Cheng Hsien-Chie
Lu Su-Tsai
Industrial Technology Research Institute
Jianq Chyun IP Office
Parker Ken A
Spalla David
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