Electrode structure for III-V compound semiconductor element and

Details Electrode structure for III-V compound semiconductor element and Electrode structure for III-V compound semiconductor element and

1990-06-11

1991-12-31

Jackson, Jr., Jerome

Fishing, trapping, and vermin destroying

357 65, 357 67, 357 68, 437180, 437184, H01L 2348, H01L 2940, H01L 2144, H01L 2148

Patent

active

050775995

ABSTRACT:
The present invention relates to an electrode structure formed on a III-V semiconductor element and a method for manufacturing the same. One object of the invention is to provide an electrode which exibits a high wire bonding strength, a low ohmic contact resistance, and high reliability, while still being easy to process in to desired shapes. The electrode structure is formed by annealing the structure after the formation of a laminated structure having an ohmic layer including at least nickel formed on the III-V compound semiconductor element, a bonding layer to be connected to a bonding wire, a stopper layer provided between the ohmic layer and the bonding layer, and an isolation layer provided between the stopper layer and the ohmic layer.

REFERENCES:
Graham et al., "Microstructural Investigation of Large Area and Device Size AuGeNi Contacts on InP," Institute of Physics Conf. Ser. No. 67, Section 10, Oxford, Mar. 21-23, 1983.
Kuan et al., "Electron Microscope Studies of an Alloyed Au/Ni/Au-Ge Ohmic Contact to GaAs", Journal of Applied Physics, pl vol. 54, (No. 12), Dec. 1983, pp. 6952-6957.
Vandenberg et al., "An in situ X-Ray Study of Gold/Barrier-Metal Interactions With GaAs P/InP Layers," Journal of Applied Physics, vol. 55, (No. 10), May 1984, pp. 3676-3681.

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