Electrode structure for ferroelectric capacitor integrated on si

Details Electrode structure for ferroelectric capacitor integrated on si Electrode structure for ferroelectric capacitor integrated on si

1995-12-26

1998-08-25

Ledynh, Bot L.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361312, 3613215, 257295, 257306, 257310, H01G 406

Patent

active

057989036

ABSTRACT:
A ferroelectric capacitor structure and its method of making in which a ferroelectric stack of two metal-oxide electrodes sandwiching a ferroelectric layer is fabricated on a silicon substrate with an intervening barrier layer, preferably of TiN. In one embodiment, a platinum layer is grown between the TiN and the lower metal-oxide electrode at a sufficiently high temperature that provides crystallographically ordered growth of the ferroelectric stack. In another embodiment, the platinum layer was completely eliminated with the lower electrode being grown directly on the TiN. Although the conventional conductive metal-oxide used in the electrode is lanthanum strontium cobalt oxide (LSCO), lanthanum nickel oxide provides good electrical and lifetime characteristics in a ferroelectric cell. Alternatively, the electrodes can be formed of the rock-salt metal oxides, such as neodymium oxide (NdO).

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