Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-02-07
2006-02-07
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S099000, C257S103000
Reexamination Certificate
active
06995391
ABSTRACT:
The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.
REFERENCES:
patent: 2002/0028346 (2002-03-01), Shi et al.
Alvarado Santos F.
Beierlein Tilman A.
Crone Brian K.
Drechsler Ute
Germann Roland
Cheung, Esq. Wan Yee
International Business Machines - Corporation
Ngo Ngan V.
Patterson & Sheridan LLP
Tong, Esq. Kin-Wah
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