Electrode structure for electronic and opto-electronic devices

Details Electrode structure for electronic and opto-electronic devices Electrode structure for electronic and opto-electronic devices

2006-02-07

2006-02-07

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S099000, C257S103000

Reexamination Certificate

active

06995391

ABSTRACT:
The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.

REFERENCES:
patent: 2002/0028346 (2002-03-01), Shi et al.

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