Electrode, method of manufacturing the same, ferroelectric...

Details Electrode, method of manufacturing the same, ferroelectric... Electrode, method of manufacturing the same, ferroelectric...

2007-01-16

2007-01-16

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S021000

Reexamination Certificate

active

10805238

ABSTRACT:
The present invention relates to a method of manufacturing an electrode which includes forming an electrode over a substrate. Initial crystal nuclei of an electrode material are formed over the substrate in an island pattern, and then grown layers of the electrode material are formed by causing the initial crystal nuclei to be grown. A substrate temperature when forming the initial crystal nuclei is higher than a substrate temperature when forming the grown layers.

REFERENCES:
patent: 6117689 (2000-09-01), Summerfelt
patent: 6534357 (2003-03-01), Basceri et al.
patent: 6545856 (2003-04-01), Norga et al.
patent: 2002/0030210 (2002-03-01), Matsui et al.
patent: 2002/0102826 (2002-08-01), Shimamoto et al.
patent: A 2003-213402 (2003-07-01), None
Stanley Wolf “Silicon Processing for the VLSI Era vol. 1: Process Technology” 1986 pp. 335 and 375.

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