Electrode line structure having fine line width and method...

Details Electrode line structure having fine line width and method... Electrode line structure having fine line width and method...

2007-02-20

2007-02-20

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S296000, C257S763000

Reexamination Certificate

active

10612096

ABSTRACT:
In an electrode line structure of a semiconductor device and a method for forming the same, the electrode line structure comprises a semiconductor substrate, and electrode lines, which are formed on the semiconductor substrate, and have an inclined end in the long axis direction. The electrode lines each include a first line unit, which substantially functions as an electrode line, a second line unit, which has an inclined end in the long axis direction and is separated from the first line unit by a predetermined distance, and an insulating plug, which is interposed between the first line unit and the second line unit and electrically insulates the first line unit from the second line unit.

REFERENCES:
patent: 6770974 (2004-08-01), Ejiri

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