Electrochemically eroding semiconductor device

Details Electrochemically eroding semiconductor device Electrochemically eroding semiconductor device

1980-03-27

1982-09-28

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

2041294, 20412965, 20412975, 156643, 156655, C25F 312, C23F 102, H01L 2142

Patent

active

043517064

ABSTRACT:
Semiconductor devices are fabricated that have precise uniform thickness regions formed by a self-limiting process in which light generated hole-electron pairs are used as a source of current in electrochemical erosion. A self-aligned MESFET semiconductor structure is provided with the gate positioned in an etched undercut of the source and drain region and enhancement and depletion mode FET devices may be made on the same substrate.

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Muller, H. et al., "Anodic Oxidation of GaAs as a Technique to Evaluate Electrical Carrier Concentration Profiles", J. Elec. Soc., May 1975, pp. 651-655.
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Shimano, A. et al., "Light-Controlled Anodic Oxidation of n-GaAs and its Application to Preparation of Specified Active Layers for MESFET's", IEEE Trans. on Electron Devices, vol. ED-26, #11, Nov. 1979.
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