Semiconductor device and preparing method therefor

Details Semiconductor device and preparing method therefor Semiconductor device and preparing method therefor

1991-10-30

1994-07-12

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257387, 257622, 365104, H01L 2710, H01L 2906, G11C 1700

Patent

active

053291484

ABSTRACT:
A semiconductor device which comprises a semiconductive substrate having thereon a plurality of source/drain regions arranged parallel to each other and a plurality of gate electrodes which extend perpendicularly to and above the source/drain regions through a gate oxide film, wherein at least one of a specific pair of source and drain regions corresponding to any desired at least one of the gate electrodes is provided with an offsetting stepped portion extending in the direction of depth of the substrate, and the offsetting stepped portion is filled up with an insulating film for filling up the stepped portion, so that the specific source/drain region provided with the offsetting stepped portion is disposed with respect to the corresponding gate electrode through a step of the offsetting stepped portion.

REFERENCES:
patent: 4380866 (1983-04-01), Countryman, Jr. et al.
patent: 4839704 (1989-06-01), Mohammadi et al.
patent: 4964080 (1990-10-01), Tzeng
patent: 5214303 (1993-05-01), Aoki

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