Electrochemical memory with internal boundary

Details Electrochemical memory with internal boundary Electrochemical memory with internal boundary

2007-09-28

2011-11-15

Gebremariam, Samuel (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C365S148000, C365S153000, C365S163000

Reexamination Certificate

active

08058643

ABSTRACT:
Non-volatile resistance change memories, systems, arrangements and associated methods are implemented in a variety of embodiments. According to one embodiment, a memory cell having two sections with outwardly-facing portions, the outwardly-facing portions electrically coupled to electrodes is implemented. The memory cell has an ionic barrier between the two sections. The two sections and the ionic barrier facilitate movement of ions from one of the two sections to the other of the two sections in response to a first voltage differential across the outwardly-facing portions. The two sections and the ionic barrier diminish movement of ions from the one of the two sections to the other of the two sections in response to another voltage differential across the outwardly-facing portions.

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