Semiconductor device manufacturing: process – Direct application of electrical current
Reexamination Certificate
2007-03-27
2007-03-27
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Direct application of electrical current
C438S469000, C438S652000, C438S666000, C257SE21185, C257SE21589
Reexamination Certificate
active
10841383
ABSTRACT:
Three-dimensional structures are electrochemically fabricated by depositing a first material onto previously deposited material through voids in a patterned mask where the patterned mask is at least temporarily adhered to a substrate or previously formed layer of material and is formed and patterned onto the substrate via a transfer tool patterned to enable transfer of a desired pattern of precursor masking material. In some embodiments the precursor material is transformed into masking material after transfer to the substrate while in other embodiments the precursor is transformed during or before transfer. In some embodiments layers are formed one on top of another to build up multi-layer structures. In some embodiments the mask material acts as a build material while in other embodiments the mask material is replaced each layer by a different material which may, for example, be conductive or dielectric.
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Lockard Michael S.
Smalley Dennis R.
Microfabrica Inc.
Smalley Dennis R.
Toledo Fernando L.
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