Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-05-30
1993-12-14
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257355, 257356, 257360, H01L 2906, H01L 2978, H01L 2702
Patent
active
052705650
ABSTRACT:
An electrostatic discharge protection circuit employing an extended resistive structure having bimodal resistance characteristics in series with an input/output buffer circuit and an input/output electrical contact pad on an integrated circuit. The extended resistive structure is integrally formed with the device or devices in the buffer circuit most susceptible to damage due to ESD breakdown effects In a first resistance mode during normal circuit operations, the resistor has a low resistance value and introduces virtually no additional load to the input/output buffer circuitry. In a second mode of operation during ESD discharge, the resistor has a second significantly higher resistance which reduces current values during the ESD event thereby protecting the buffer circuit. Thick oxide snap-back device is also employed to provide a parallel ESD discharge path with low power dissipation.
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Lee Alan
Lee Kwok Fai V.
Marmet Melvin L.
Ouyang Kenneth W.
Carroll J.
Western Digital Corporation
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