Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-14
2006-03-14
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S173000, C257S357000, C257S546000
Reexamination Certificate
active
07012305
ABSTRACT:
An electro-static discharge (ESD) protection circuit for a dual polarity I/O pad is provided. The protection circuit includes a substrate of first type; a deep well region of second type disposed in the first type substrate; a well region of first type disposed in the second type deep well region; a first transistor disposed over the well region of first type, wherein the first transistor has a first source, a first gate and a first drain; a second transistor disposed over the substrate of first type, wherein the second transistor has a second source, a second gate and a second drain, and the second source is connected with the first drain, and both of them are disposed in a portion of the well region of first type, the deep well region of second type and the substrate of first type; a first doped region is disposed in the first type well region and laterally adjacent to the first source; a second doped region is disposed in the substrate of first type and laterally adjacent to the second drain.
REFERENCES:
patent: 6016002 (2000-01-01), Chen et al.
patent: 6081002 (2000-06-01), Amerasekera et al.
patent: 6215135 (2001-04-01), Schroder
patent: 6498357 (2002-12-01), Ker et al.
patent: 6538266 (2003-03-01), Lee et al.
Lai Chun-Hsiang
Lu Chia-Ling
Lu Tao-Cheng
Su Shin
Yeh Yen-Hung
Jianq Chyun IP Office
MACRONIX International Co. Ltd.
Thomas Tom
Warren Matthew E.
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