Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Polycrystalline semiconductor
Reexamination Certificate
2006-10-06
2010-02-16
Blum, David S (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Polycrystalline semiconductor
C257S067000, C257S069000, C257SE21133
Reexamination Certificate
active
07662704
ABSTRACT:
An electro-optical device includes: a substrate; a plurality of pixel units provided in a display region on the substrate; and a driving circuit that is provided in a peripheral region surrounding the display region and includes semiconductor elements that drive the plurality of pixel units, each of the semiconductor elements having a first semiconductor layer and a second semiconductor layer. The first semiconductor layer has an SOI (silicon on insulator) structure including a first single crystal silicon layer, and the second semiconductor layer is formed of a second single crystal silicon layer that is formed on the first semiconductor layer by epitaxial growth.
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Blum David S
Luke Daniel
Oliff & Berridg,e PLC
Seiko Epson Corporation
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