Electro-optical device, method of manufacturing the same,...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Polycrystalline semiconductor

Reexamination Certificate

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C257S067000, C257S069000, C257SE21133

Reexamination Certificate

active

07662704

ABSTRACT:
An electro-optical device includes: a substrate; a plurality of pixel units provided in a display region on the substrate; and a driving circuit that is provided in a peripheral region surrounding the display region and includes semiconductor elements that drive the plurality of pixel units, each of the semiconductor elements having a first semiconductor layer and a second semiconductor layer. The first semiconductor layer has an SOI (silicon on insulator) structure including a first single crystal silicon layer, and the second semiconductor layer is formed of a second single crystal silicon layer that is formed on the first semiconductor layer by epitaxial growth.

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