Electro-optical device, method for manufacturing...

Details Electro-optical device, method for manufacturing... Electro-optical device, method for manufacturing...

2007-04-27

2008-12-02

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S059000, C257S072000, C257SE29151, C438S152000

Reexamination Certificate

active

07459753

ABSTRACT:
An electro-optical device includes a substrate having a display region; TFTs each including a first electrode in the display region, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second insulating layer on the second electrode; and terminals each including a first metal on a protruding section extending from the display region, which is located at the same level and made of the same metal as the first electrode, a second metal which is located at the same level and made of the same metal as the second electrode, and which partly overlaps the first metal in plan view, and a portion of the first insulating layer. The first insulating layer separates the first and second metals and the first metal is electrically connected to the first electrode or the second metal is electrically connected to the second electrode.

REFERENCES:
patent: 6610997 (2003-08-01), Murade
patent: 2006/0249733 (2006-11-01), Yamazaki et al.
patent: 2007/0007527 (2007-01-01), Koyama
patent: 2000-347206 (2000-12-01), None
patent: 2004-184741 (2004-02-01), None
patent: 2005-017926 (2005-01-01), None

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