Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-01-26
2008-12-09
Ngo, Ngan (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S486000, C257SE21598, C257SE21705
Reexamination Certificate
active
07462517
ABSTRACT:
A high performance circuit is formed by using a TFT with less fluctuation in characteristics, and a semiconductor device including such a circuit is formed. When the TFT is formed, first, a base film and a semiconductor film are continuously formed on a quartz substrate without exposing to the air. After the semiconductor film is crystallized by using a catalytic element, the catalytic element is removed. In the TFT formed in such a process, fluctuation in electrical characteristics such as a threshold voltage and a subthreshold coefficient is extremely small. Thus, it is possible to form a circuit, such as a differential amplifier circuit, which is apt to receive an influence of characteristic fluctuation of a TFT.
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Koyama Jun
Ohtani Hisashi
Yamazaki Shunpei
Costellia Jeffrey L.
Ngo Ngan
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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