Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-16
2009-08-04
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S059000, C257S072000, C257SE27016
Reexamination Certificate
active
07569885
ABSTRACT:
An electro-optical device includes pixel regions arranged at intersections of a plurality of data lines and a plurality of scanning lines on an element substrate. A sensor element, a sensor signal line for outputting a signal from the sensor element, a common wiring line, and a capacitive-coupling-operation bidirectional diode element are disposed at an end of a region on the element substrate in which the pixel regions are arranged. The capacitive-coupling-operation bidirectional diode element includes two capacitive-coupling-operation diode elements each including a semiconductor element including a source electrode, a drain electrode, a semiconductor layer having a channel region, and a gate electrode facing the channel region with a gate insulating film disposed therebetween, and a capacitor element arranged between one of the source electrode and the drain electrode and the gate electrode.
REFERENCES:
patent: 2004/0017531 (2004-01-01), Nagata et al.
patent: 2007/0146251 (2007-06-01), Tsuge et al.
patent: 2007/0205999 (2007-09-01), Akimoto et al.
patent: 2008/0001091 (2008-01-01), Kobayashi et al.
patent: A 2004-303925 (2004-10-01), None
Hirabayashi Yukiya
Sano Yutaka
Sato Takashi
Ngo Ngan
Oliff & Berridg,e PLC
Seiko Epson Corporation
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