Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-07
2006-03-07
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S059000, C257S072000
Reexamination Certificate
active
07009254
ABSTRACT:
An electro-optical device includes a plurality of pixels, a sampling circuit, electrostatic protection circuits, constant potential lines, and image signal lines. The electrostatic protection circuits switching elements having first terminals and second terminals. The first terminals are electrically connected to the second terminals when an over voltage is applied to the first terminals. The constant potential lines are connected to the second terminals of the switching elements via contact holes of the first insulating layer. The image signal lines transmit image signals supplied to input terminals to the sampling circuit. The image signal lines include first wiring line portions connected to the first terminals of the switching elements via the contact holes of the first insulating layer, and a second wiring line portion connected to the first wiring line portion via contact holes of the second insulating layer.
REFERENCES:
patent: 2004/0032553 (2004-02-01), Hong
patent: A-2001-83546 (2001-03-01), None
patent: A-2003-177423 (2003-06-01), None
patent: A-2003-249659 (2003-09-01), None
Ishii Kenya
Nagasawa Hitoya
Ho Tu-Tu
Oliff & Berridg,e PLC
Seiko Epson Corporation
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