Electro-optic device, method for manufacturing the same, and...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C257S059000

Reexamination Certificate

active

07605024

ABSTRACT:
An electro-optic device includes data lines and scanning lines extending to cross each other on a substrate, pixel electrodes disposed on the substrate for respective pixels defined corresponding to the data lines and the scanning lines in a plan view of the substrate, thin film transistors electrically connected to the respective pixel electrodes, and at least one amorphous wiring including an amorphous film and disposed in a region containing a region opposite to a channel region of each of the thin film transistors in a plan view of the substrate and in a layer different from that of semiconductor films of the thin film transistors.

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patent: 5684555 (1997-11-01), Shiba et al.
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patent: 5814377 (1998-09-01), Robles et al.
patent: 2001/0004479 (2001-06-01), Cheung et al.
patent: 2001/0008795 (2001-07-01), Terauchi et al.
patent: 2001/0022365 (2001-09-01), Murade
patent: 2002/0074547 (2002-06-01), Yudasaka et al.
patent: A 2002-156652 (2002-05-01), None

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