Electro-mechanically polished structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S298000, C257S300000, C257S309000, C257S311000, C257S532000, C257S762000, C257S764000, C257S301000, C257S302000, C257S303000, C257S304000, C257S305000, C257S306000, C257S307000, C257S308000

Reexamination Certificate

active

06867448

ABSTRACT:
A method of patterning a metal surface by electro-mechanical polishing is disclosed. A metal surface is placed in fluid communication with an abrasive surface of a pad. The two surfaces are moved relative to each other, in acidic fluid which contains abrasive particles. An electrical circuit is formed between the metal surface and abrasive pad and a current is supplied to the circuit. The patterned surface then is processed into a useful feature such as a bottom electrode for a DRAM capacitor.

REFERENCES:
patent: 4839005 (1989-06-01), Katsumoto et al.
patent: 5244534 (1993-09-01), Yu et al.
patent: 5300155 (1994-04-01), Sandhu et al.
patent: 5567300 (1996-10-01), Datta et al.
patent: 5575885 (1996-11-01), Hirabayashi et al.
patent: 5618381 (1997-04-01), Doan et al.
patent: 5676587 (1997-10-01), Landers et al.
patent: 5681423 (1997-10-01), Sandhu et al.
patent: 5780358 (1998-07-01), Zhou et al.
patent: 5807165 (1998-09-01), Uzoh et al.
patent: 5840629 (1998-11-01), Carpio
patent: 5846398 (1998-12-01), Carpio
patent: 5863307 (1999-01-01), Zhou et al.
patent: 5897375 (1999-04-01), Watts et al.
patent: 5911619 (1999-06-01), Uzoh et al.
patent: 5930699 (1999-07-01), Bhatia
patent: 5934980 (1999-08-01), Koos et al.
patent: 5952687 (1999-09-01), Kawakubo et al.
patent: 5954975 (1999-09-01), Cadien et al.
patent: 5954997 (1999-09-01), Kaufman et al.
patent: 5972792 (1999-10-01), Hudson
patent: 5993637 (1999-11-01), Hisamatsu et al.
patent: 6001730 (1999-12-01), Farkas et al.
patent: 6010964 (2000-01-01), Glass
patent: 6033953 (2000-03-01), Aoki et al.
patent: 6039633 (2000-03-01), Chopra
patent: 6046099 (2000-04-01), Cadien et al.
patent: 6051496 (2000-04-01), Jang
patent: 6060386 (2000-05-01), Givens
patent: 6060395 (2000-05-01), Skrovan et al.
patent: 6063306 (2000-05-01), Kaufman et al.
patent: 6066030 (2000-05-01), Uzoh
patent: 6066559 (2000-05-01), Gonzalez et al.
patent: 6068787 (2000-05-01), Grumbine et al.
patent: 6083840 (2000-07-01), Mravic et al.
patent: 6100197 (2000-08-01), Hasegawa
patent: 6103628 (2000-08-01), Talieh
patent: 6115233 (2000-09-01), Seliskar
patent: 6117781 (2000-09-01), Lukanc et al.
patent: 6121152 (2000-09-01), Adams et al.
patent: 6143155 (2000-11-01), Adams et al.
patent: 6171467 (2001-01-01), Weihs et al.
patent: 6176992 (2001-01-01), Talieh
patent: 6180974 (2001-01-01), Okutoh et al.
patent: 6187651 (2001-02-01), Oh
patent: 6196899 (2001-03-01), Chopra et al.
patent: 6206756 (2001-03-01), Chopra et al.
patent: 6218309 (2001-04-01), Miller et al.
patent: 6250994 (2001-06-01), Chopra et al.
patent: 6259128 (2001-07-01), Adler et al.
patent: 6273786 (2001-08-01), Chopra et al.
patent: 6276996 (2001-08-01), Chopra
patent: 6287974 (2001-09-01), Miller
patent: 6299741 (2001-10-01), Sun et al.
patent: 6303956 (2001-10-01), Sandhu et al.
patent: 6313038 (2001-11-01), Chopra et al.
patent: 6328632 (2001-12-01), Chopra
patent: 6368190 (2002-04-01), Easter et al.
patent: 6455370 (2002-09-01), Lane
patent: 20010025976 (2001-10-01), Lee
patent: 20010035746 (2001-11-01), Sato et al.
patent: 20010036746 (2001-11-01), Sato et al.
patent: 20020025759 (2002-02-01), Lee et al.
patent: 20020025760 (2002-02-01), Lee et al.
patent: 20020025763 (2002-02-01), Lee et al.
patent: 20020052126 (2002-05-01), Lee et al.
patent: 20020070126 (2002-06-01), Sato et al.
patent: 20030054729 (2003-03-01), Lee et al.
patent: 20030109198 (2003-06-01), Lee et al.
patent: 20030129927 (2003-07-01), Lee et al.
patent: 0 459 397 (1991-12-01), None
patent: 2001-077117 (2001-03-01), None
patent: WO 0026443 (2000-05-01), None
patent: WO 0028586 (2000-05-01), None
patent: WO 0032356 (2000-06-01), None
patent: WO 0059008 (2000-10-01), None
patent: WO 0059682 (2000-10-01), None
patent: WO 02064314 (2002-08-01), None
Kondo, S. et al., “Abrasive-Free Polishing for Copper Damascene Interconnection,” Journal of the Electrochemical Society, vol. 147, No. 10, pp. 3907-3913, (2000).
Dheurle, F.M. and K.C. Park, IBM Technical Disclosure Bulletin, Electrolytic Process for Metal Pattern Generation, vol. 17, No. 1, pp. 271-272, Jun. 1974, XP-002235691, NN 7406271.
Frankenthal, R.P. and Eaton, D.H., “Electroetching of Platinum in the Titanium-Platinum-Gold Metallization on Silicon Integrated Circuits,” Journal of The Electrochemical Society, vol. 123, No. 5, pp. 703-706, May 1976, Pennington, New Jersey.
Aboaf, J.A. and R.W. Broadie, IBM Technical Disclosure Bulletin, Rounding of Square-Shape Holes in Silicon Wafers, vol. 19, No. 8, p. 3042, Jan. 1977, XP-002235690, NN 77013042.
Bassous, E, IBM Technical Disclosure Bulletin, Low Temperature Methods for Rounding Silicon Nozzles, vol. 20, No. 2, Jul. 1977, pp. 810-811, XP-002235692, NN 7707810.
McGraw-Hill, “Chemical bonding,” Concise Encyclopedia of Science & Technology, Fourth Edition, Sybil P. Parker, Editor in Chief, p. 367, McGraw-Hill, New York, New York, 1998.
PhysicsWorld. Hard Materials (excerpt of Superhard superlattices) [online], S. Barnett and A. Madan, Physics World, Jan. 1998, Institute of Physics Publishing Ltd., Bristol, United Kingdom, Retrieved from the Internet on Jul. 29, 2002, <URL: http://physicsweb.org/box/world/11/1/11/world-11-1-11-1>.
Huang, C.S. et al., “A Novel UV Baking Process to Improve DUV Photoresist Hardness,” pp. 135-138, Proceedings of Technical Papers: Jun. 8-10, 1999, Taipei, Taiwan, Institute of Electrical and Electronics Engineers, Inc., Sep. 1999.
ATMI, Inc., adapted from a presentation at the Semicon West '99 Low Dielectric Materials Technology Conference, San Francisco, California, Jul. 12, 1999, pp. 13-25.
Micro Photonics, Inc. CSM Application Bulletin, Low-load Micro Scratch Tester (MST) for characterisation of thin polymer films [online], 3 pages, Retrieved from the Internet on Jul. 25, 2002, <URL: http://www.microphotonics.com/mstABpoly.html>.
Micro Photonics, Inc. CSM Nano Hardness Tester [online], 6 pages, Retrieved from the Internet on Jul. 29, 2002, <URL:http://www.microphotonics.com
ht.html>.
“Electrochemical Planarization for Multi-Level Metallization of Microcircuitry”,Circuitree, Anthony F. Bernhardt et al., Oct. 1995, pp 38-48.
R. Juchniewicz, et al., “Influence of Pulsed Current of Platinised Titanium and Tantaium Oxide Durability,”International Congress of Metallic Corrosion, vol. 3—Proceedings, Toronto, ON, pp. 449-453 (Jun. 3-7, 1984).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Electro-mechanically polished structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electro-mechanically polished structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electro-mechanically polished structure will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3406832

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.