Electrically-programmable read-only memory fabricated using a dy

Details Electrically-programmable read-only memory fabricated using a dy Electrically-programmable read-only memory fabricated using a dy

1998-03-20

1999-11-30

Hoang, Huan

Static information storage and retrieval

Systems using particular element

Capacitors

36518508, 365104, G11C 1124

Patent

active

059954094

ABSTRACT:
A method of permanently programming selected cells of dynamic random access memory cell array. First selected cell is programmed to a Logic 1 by grounding a first capacitor plate of the first cell, and applying a programming voltage to a second capacitor plate common to the cells of the array. A dielectric disposed between the first capacitor plate and the second capacitor plate breaks down, thereby shorting the first and second capacitor plates. A second selected cell is programmed to store a Logic 1 by allowing a first capacitor of the second cell to float during a period when the programming voltage is applied to the second capacitor plate.

REFERENCES:
patent: 5331188 (1994-07-01), Acovic et al.
patent: 5365477 (1994-11-01), Cooper, Jr. et al.
patent: 5875127 (1999-02-01), Yin

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