Electrically programmable read only memory device with timing de

Details Electrically programmable read only memory device with timing de Electrically programmable read only memory device with timing de

1991-08-27

1994-03-01

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

36518911, 365900, 365226, G11C 700

Patent

active

052914410

ABSTRACT:
An electrically programmable read only memory device in a read-out mode of operation lifts one of the word lines to a read-out voltage level higher than an external power voltage level to see whether or not a designated floating gate type memory transistor provides a conductive channel, and the selected word line is firstly lifted to a first predetermined voltage level with a power voltage line, then being further lifted to the read-out voltage level supplied from a step-up circuit, wherein a monitoring unit is provided for the word lines for detecting the first predetermined voltage level so that an address set-up period is minimized without margin for fluctuation of process parameters.

REFERENCES:
patent: 4503522 (1985-03-01), Etoh et al.
patent: 4506350 (1985-03-01), Asano et al.
patent: 4896297 (1990-01-01), Miyatake et al.
patent: 5031149 (1991-07-01), Matsumoto et al.

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