Electrically programmable read only memory device with reliable

Details Electrically programmable read only memory device with reliable Electrically programmable read only memory device with reliable

1991-10-07

1993-11-30

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Differential sensing

365196, 365203, G11C 706

Patent

active

052672077

ABSTRACT:
An electrically programmable read only memory device memorizes data bits in memory cells each implemented by a pair of floating gate type field effect transistors, and first and second current mirror circuits supplies currents to a pair of digit lines coupled to the pair of floating gate type field effect transistors for producing a difference in voltage level indicative of the read-out data bit which is quickly converted into a voltage level with a third current mirror circuit, wherein the ratio of conductances of first and second current paths of the third current mirror circuit is controlled by a ratio controlling circuit depending upon an output data signal so that an output inverting circuit coupled with the third current mirror circuit never transiently shifts the voltage level of the output data signal upon changing the memory cell to be accessed.

REFERENCES:
patent: 4791324 (1988-12-01), Hodapp
patent: 4879682 (1989-11-01), Engles
patent: 4907201 (1990-03-01), Minami et al.

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