Electrically programmable read-only memory cell

Details Electrically programmable read-only memory cell Electrically programmable read-only memory cell

1994-09-26

1996-01-09

Monin, Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257322, 257329, 257334, 257401, H01L 2968, H01L 21265

Patent

active

054830940

ABSTRACT:
An electrically programmable read-only memory cell includes a single crystal silicon pillar having the active region of the memory cell. A memory array of the cells may be configured to act as an EPROM array, an EEPROM array, or a flash EEPROM array. A silicon spacer lies adjacent to each of the silicon pillars and acts as a floating gate for its particular memory cell. A memory cell may have a cell area that is less than one square micron. In an EPROM or a flash EEPROM array, no field isolation is required between the memory cells within the array. Processes for forming the memory cells and the memory array are disclosed.

REFERENCES:
patent: 4530149 (1985-07-01), Jastrzebski et al.
patent: 4908326 (1990-03-01), Ma et al.
patent: 5017977 (1991-05-01), Richardson
patent: 5078498 (1992-01-01), Kadakia et al.
patent: 5106775 (1992-04-01), Kaga et al.
patent: 5135879 (1992-08-01), Richardson
patent: 5141886 (1992-08-01), Mori
patent: 5180680 (1993-01-01), Yang
patent: 5196722 (1993-03-01), Bergendahl et al.
patent: 5208172 (1993-05-01), Fitch et al.
patent: 5316962 (1994-05-01), Matsuo et al.
patent: 5350937 (1994-09-01), Yamazaki et al.
patent: 5414287 (1995-05-01), Hong
IBM Technical Disclosure Bulletin "Vertical EEPROM Cell"]vol. 35 No. 4B Sep. 1992 p. 130.
Takato, et al; "Impact of Surrounding Gate Transistor (SGT) for Ultra-High-Density LSI's"; IEEE Transactions On Electron Devices; vol. 38, No. 3, pp. 573-577 (1991).
Pein, et al.; "A 3-D Sidewall Flash EPROM Cell and Memory Array"; IEEE Electron Device Ltrs.; vol. 14, No. 8, pp. 415.417 (Aug. 1993).

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