Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-09-20
1997-04-01
Whitehead, Jr., Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, 257239, H01C 29788, H01C 27148
Patent
active
056169418
ABSTRACT:
A floating gate (51)is formed to have a cavity (52) that increases the capacitive coupling between the floating gate (51) and a control gate for the memory cell. The memory cell may be used in EPROM, EEPROM, and flash EEPROM arrays and may be programmed and erased by hot carrier injection, Fowler-Nordheim tunneling or the like. The process sequence for forming the cavity (52) of the floating gate (51) has good process margin allowing some lithographic misalignment. In one embodiment, a multi-tiered floating gate may be formed. The multi-tier structure allows the capacitive coupling to further increase without occupying more area.
REFERENCES:
patent: 4700457 (1987-10-01), Matsukawa
patent: 5077225 (1991-12-01), Lee
patent: 5150276 (1992-09-01), Gonzalez et al.
patent: 5155657 (1992-10-01), Oehrlein et al.
patent: 5158905 (1992-10-01), Ahn
patent: 5164337 (1992-11-01), Ogawa et al.
patent: 5231041 (1993-07-01), Arima et al.
patent: 5262662 (1993-11-01), Gonzalez et al.
patent: 5395779 (1995-03-01), Hong
patent: 5399516 (1995-03-01), Bergendahl et al.
patent: 5479368 (1995-12-01), Keshtbod
Taguchi, et al.; "A 40-ns 64-Mb DRAM with 64-b Parallel Data Bus Architecture;" IEEE Jour. of Solid-State Circuits; vol. 26, No. 11, pp. 1493-1497 (1991).
Itabashi, et al.; "A Split Wordline Cell For 16Mb SRAM Using Polysilicon Sidewall Contacts;" IEDM; pp. 477-480 (1991).
Kume, et al.; "A 1.28.mu.m2 Contactless Memory Cell Technology for a 3V-Only 64Mbit EEPROM;" 1992 IEDM Tech. Dig.; CH.3211-0, pp. 91-93 (Dec. 1992).
Kirsch Howard C.
Roth Scott S.
Meyer George R.
Motorola Inc.
Whitehead Jr. Carl W.
LandOfFree
Electrically programmable read-only memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electrically programmable read-only memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically programmable read-only memory cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-541628