Electrically programmable non-volatile memory having sequentiall

Details Electrically programmable non-volatile memory having sequentiall Electrically programmable non-volatile memory having sequentiall

1987-10-20

1989-08-22

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

Signals

365189, 365226, 365185, 365240, 36518908, G11C 700

Patent

active

048602582

ABSTRACT:
An electrically programmable non-volatile memory includes a matrix of memory cells accessible by rows and columns, write and read circuits which apply potentials, representing the programmed datum or representing the read command, to the rows and columns. The memory also includes a device which controls the interconnection of the write and read circuits with the memory cells, wherein N memory cells are programmed simultaneously, N being greater than 1, each memory cell setting up a current surge when it is programmed at "1". The memory also includes a device for deactivating, one by one, the write circuits corresponding to the N memory cells where there is a change-over from a programming mode to a read mode, and a structure to short-circuit the deactivation device at the change-over to the programming mode.

REFERENCES:
patent: 4441198 (1984-04-01), Shibata et al.
patent: 4453208 (1984-06-01), Middleton et al.
patent: 4644250 (1987-02-01), Hartgring
patent: 4710900 (1987-12-01), Higuchi

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