Electrically-programmable non-volatile memory cell

Details Electrically-programmable non-volatile memory cell Electrically-programmable non-volatile memory cell

2005-04-19

2005-04-19

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S322000, C257S324000, C257S325000, C257S326000, C438S201000, C438S211000, C438S216000, C438S257000, C438S261000, C438S266000

Reexamination Certificate

active

06882001

ABSTRACT:
An electrically-programmable memory cell programmed by means of injection of channel hot electrons into a charge-storage element capacitively coupled to a memory cell channel for modulating a conductivity thereof depending on a stored amount of charge. A first and a second spaced-apart electrode regions are formed in a semiconductor layer and define a channel region there between; at least one of the first and second electrode regions acts as a programming electrode of the memory cell. A control electrode is capacitively coupled to the charge-storage element. The charge-storage element is placed over the channel to substantially extend from the first to the second electrode regions, and is separated from the channel region by a dielectric layer. The dielectric layer has a reduced thickness in a portion thereof near the at least one programming electrode.

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