Electrically programmable memory with several information bits p

Details Electrically programmable memory with several information bits p Electrically programmable memory with several information bits p

1989-04-24

1990-10-16

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Ternary

365184, G11C 1156, G11C 1134

Patent

active

049640798

ABSTRACT:
The disclosure concerns electrically programmable memories and, notably, the memories known as EPROMs, EEPROMs, FLASH-EEPROMs. To increase the information storage capacity of a memory, it is proposed to define at least three (instead of two) sections of current coming from a cell to which reading voltages are applied. These sections correspond to n possible programmed states of the cell. Comparators define a piece of information stored, for example, in two-bit form on the outputs S1, S2. However, to ensure safety during the reading despite programming uncertainties, the cell is tested by means of additional comparators and, if the cell current measured for a programming level defined among n levels is too close to the current threshold that defines the programming threshold at this level, an operation for complementary programming of the cell is triggered.

REFERENCES:
patent: 4653023 (1987-03-01), Suzuki et al.
patent: 4794564 (1988-12-01), Watanabe
patent: 4809227 (1989-02-01), Suzuki et al.
patent: 4847808 (1989-07-01), Kobatake
IEEE Transactions on Computers, vol. L-35, No. 2, D. A. Rich, Feb. 1986, pp. 99-104.
IEEE Journal of Solid State Circuits, vol. SC-11, No. 4, R. A. Heald, Aug. 1976, pp. 519-528.

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