Static information storage and retrieval – Read/write circuit – Having fuse element
Reexamination Certificate
2007-09-18
2007-09-18
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having fuse element
C365S096000, C257S530000, C257S529000, C257S106000, C438S131000, C438S600000, C438S983000, C438S467000
Reexamination Certificate
active
11060925
ABSTRACT:
Integrated circuit antifuse circuitry is provided. A metal-oxide-semiconductor (MOS) antifuse transistor serves as an electrically-programmable antifuse. In its unprogrammed state, the antifuse transistor is off and has a relatively high resistance. During programming, the antifuse transistor is turned on which melts the underlying silicon and causes a permanent reduction in the transistor's resistance. A sensing circuit monitors the resistance of the antifuse transistor and supplies a high or low output signal accordingly. The antifuse transistor may be turned on during programming by raising the voltage at its substrate relative to its source. The substrate may be connected to ground through a resistor. The substrate may be biased by causing current to flow through the resistor. Current may be made to flow through the resistor by inducing avalanche breakdown of the drain-substrate junction or by producing Zener breakdown of external Zener diode circuitry connected to the resistor.
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Huang Cheng H.
Liu Yowjuang
O Hugh Sung-Ki
Shih Chih-Ching
Altera Corporation
Elms Richard T.
Treyz G. Victor
Wendler Eric
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