Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-01-16
1998-12-22
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257653, 257775, H01L 2900
Patent
active
058523235
ABSTRACT:
An antifuse is described that can be formed without masks or mask steps beyond those required for a conventional CMOS process. The antifuse includes adjacent p-type and n-type diffusion regions that together form a P-N junction. The diffusion regions are tapered toward one another such that the P-N junction is located at a necked-down region of the antifuse. The diffusion regions are connected to respective terminals of a programming-voltage source via first and second metal electrical contacts, typically of aluminum metal. Each of the first and second electrical contacts includes a point directed toward the other of the first and second electrical contacts. The antifuse is programmed by providing a reverse-bias programming voltage across the electrical contacts. This programming voltage exceeds the breakdown voltage of the P-N junction so that current flows through the necked-down region of the antifuse between the points on the respective first and second electrical contacts. This current heats the region between the opposite points to create a hot filament between the first and second metal contacts. Metal from the metal contacts then diffuses along the filament to form a conductor between metal contacts.
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Pucknell, Douglas A. and Eshraghian, Kamran, "Basic VLSI Design," 1994, Prentice Hall Australia, Chapter 1, A review of microelectronics and an introduction to MOS technology, pp. 15-19.
Behiel Arthur J.
Carroll J.
Harms Jeanette S.
Xilinx , Inc.
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