Electrically programmable antifuse using metal penetration of a

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257653, 257775, H01L 2900

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active

058523235

ABSTRACT:
An antifuse is described that can be formed without masks or mask steps beyond those required for a conventional CMOS process. The antifuse includes adjacent p-type and n-type diffusion regions that together form a P-N junction. The diffusion regions are tapered toward one another such that the P-N junction is located at a necked-down region of the antifuse. The diffusion regions are connected to respective terminals of a programming-voltage source via first and second metal electrical contacts, typically of aluminum metal. Each of the first and second electrical contacts includes a point directed toward the other of the first and second electrical contacts. The antifuse is programmed by providing a reverse-bias programming voltage across the electrical contacts. This programming voltage exceeds the breakdown voltage of the P-N junction so that current flows through the necked-down region of the antifuse between the points on the respective first and second electrical contacts. This current heats the region between the opposite points to create a hot filament between the first and second metal contacts. Metal from the metal contacts then diffuses along the filament to form a conductor between metal contacts.

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Fu, Kuan-Yu and Pyle, Ronald E., "On the Failure Mechanisms of Titanium Nitride/Titanium Silicide Barrier Contacts under High Stress," Dec. 1988, IEEE Transactions on Electron Devices, vol. 35, No. 12, pp. 2151-2159.
Hsieh, C. M. and Wilson, H. R., "Electrically Programmable Transistor Pipes," Dec. 1981, IBM Technical Disclosure Bulletin, vol. 24, No. 7A, pp. 3478-3479.
Pucknell, Douglas A. and Eshraghian, Kamran, "Basic VLSI Design," 1994, Prentice Hall Australia, Chapter 1, A review of microelectronics and an introduction to MOS technology, pp. 15-19.

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