Electrically programmable antifuse

Details Electrically programmable antifuse Electrically programmable antifuse

1994-08-16

1997-09-23

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, H01C 2900

Patent

active

056708181

ABSTRACT:
In an antifuse and metal interconnect structure in an integrated circuit a substrate has an insulating layer disposed on an upper surface, a first multilayer metal interconnect layer disposed on the insulating layer, and having a first portion forming a lower antifuse electrode and a second portion forming a lower metal interconnect electrode wherein the first portion includes an upper barrier metal layer. An inter-metal dielectric layer is disposed on the lower antifuse and metal interconnect electrodes wherein the inter-metal dielectric layer includes an antifuse via formed therethrough and communicating with said lower antifuse electrode, and a metal interconnect via former therethrough communicating with the lower metal interconnect electrode, An antifuse material layer is disposed in the antifuse via, and a second multilayer metal interconnect layer is disposed on the antifuse material layer and in the upper metal interconnect electrode via and on the lower metal interconnect electrode.

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