Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1996-01-22
1997-09-23
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257532, 257538, 257544, H01L 2900
Patent
active
056708190
ABSTRACT:
An N.sup.- -type epitaxial layer is formed on a P-type semiconductor substrate. A P-type region is formed in the N.sup.- -type epitaxial layer. First and second N.sup.- -type layer islands, isolated by the P-type region, are formed in the N.sup.- -type epitaxial layer. An N.sup.+ +-type contact region is formed in a surface region of the first N.sup.- -type layer island. A pad electrode is formed above the first N.sup.- -type layer island with an oxide film interposed therebetween. A polysilicon layer serving as a resistor is formed above the second N.sup.- -type layer island with the oxide film interposed therebetween. A first conductive layer for electrically connecting the polysilicon layer with the N.sup.+ -type contact region is formed on the polysilicon layer, the N.sup.+ -type contact region and the oxide film. A second conductive layer for electrically connecting the polysilicon layer with a stable high-potential power source is formed on the oxide film and the polysilicon layer.
REFERENCES:
patent: 4578695 (1986-03-01), Delaporte et al.
patent: 4984031 (1991-01-01), Rinderle
"IBM Technical Disclosure Bulletin"; Ning; vol. 23, No.1 Jun. 1980; pp. 368-370.
Fahmy Wael
Kabushiki Kaisha Toshiba
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