Electrically modifiable non-volatile memory with write checking

Details Electrically modifiable non-volatile memory with write checking Electrically modifiable non-volatile memory with write checking

1994-11-17

1998-04-21

Yoo, Do Hyun

Static information storage and retrieval

Read/write circuit

Testing

36518901, 36518907, G11C 700

Patent

active

057425485

ABSTRACT:
In order to make it possible to ascertain that the programming cycles in an EEPROM type memory have been carried out efficiently, supplementary test cells are provided. A data writing operation is carried out in three successive cycles that consist in the programming of a test cell with a first logic value, a second cycle for the programming of the data elements and a third cycle for the programming of the test cell with a logic value that is complementary to the first one. The state of the test cell enables the detection of power interruptions during programming.

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patent: 5453954 (1995-09-01), Nakamura
patent: 5471428 (1995-11-01), Baron et al.
patent: 5487042 (1996-01-01), Edo
patent: 5491662 (1996-02-01), Pezzini

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