Electrically modifiable multilevel non-volatile memory comprisin

Details Electrically modifiable multilevel non-volatile memory comprisin Electrically modifiable multilevel non-volatile memory comprisin

1997-10-24

2000-04-11

Yoo, Do Hyun

Static information storage and retrieval

Read/write circuit

Data refresh

36518511, 36518529, 36518907, 365218, 36523003, G11C 800

Patent

active

060494972

ABSTRACT:
Disclosed is an electrically modifiable, multilevel non-volatile memory including internal refresh means. If a memory with n sectors is considered, only n-1 sectors are allocated simultaneously to the storage of the data elements, the remaining sector or refresh sector is used to receive the duplicated data from one of the n-1 sectors assigned simultaneously to the storage of the data elements. After each duplication, the duplicated sector is replaced by said refresh sector and itself becomes the new refresh sector, in such a way that that all the n sectors, in turn, take part in the refresh operation.

REFERENCES:
patent: 5251177 (1993-10-01), Akamatsu et al.
patent: 5283885 (1994-02-01), Hollerbauer

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