Electrically isolated gated diode nonvolatile memory

Static information storage and retrieval – Systems using particular element – Semiconductive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185180

Reexamination Certificate

active

07995384

ABSTRACT:
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Adjacent memory devices are electrically isolated. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.

REFERENCES:
patent: 4115794 (1978-09-01), De La Moneda
patent: 4369072 (1983-01-01), Bakeman, Jr. et al.
patent: 4393481 (1983-07-01), Owen et al.
patent: 4504847 (1985-03-01), Nishizawa et al.
patent: 4569120 (1986-02-01), Stacy et al.
patent: 4617652 (1986-10-01), Simko
patent: 4752699 (1988-06-01), Cranford, Jr. et al.
patent: 4905065 (1990-02-01), Selcuk et al.
patent: 4939690 (1990-07-01), Momodomi et al.
patent: 4949140 (1990-08-01), Tam
patent: 4999812 (1991-03-01), Amin et al.
patent: 5041885 (1991-08-01), Gualandris et al.
patent: 5257095 (1993-10-01), Liu et al.
patent: 5287536 (1994-02-01), Schreck et al.
patent: 5311480 (1994-05-01), Schreck
patent: 5362663 (1994-11-01), Bronner et al.
patent: 5365083 (1994-11-01), Tada et al.
patent: 5434498 (1995-07-01), Cordoba et al.
patent: 5455793 (1995-10-01), Amin et al.
patent: 5483484 (1996-01-01), Endoh et al.
patent: 5491657 (1996-02-01), Haddad et al.
patent: 5512767 (1996-04-01), Noble, Jr.
patent: 5523249 (1996-06-01), Gill et al.
patent: 5532618 (1996-07-01), Hardee et al.
patent: 5617357 (1997-04-01), Haddad et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5753950 (1998-05-01), Kojima et al.
patent: 5768192 (1998-06-01), Eitan et al.
patent: 5784327 (1998-07-01), Hazani
patent: 5808506 (1998-09-01), Tran
patent: 5814853 (1998-09-01), Chen
patent: 5831901 (1998-11-01), Tang et al.
patent: 5912840 (1999-06-01), Gonzalez et al.
patent: 6008525 (1999-12-01), Barron et al.
patent: 6011725 (2000-01-01), Eitan et al.
patent: 6072720 (2000-06-01), Peng et al.
patent: 6160286 (2000-12-01), Chi et al.
patent: 6243299 (2001-06-01), Rinerson et al.
patent: 6351411 (2002-02-01), Forbes et al.
patent: 6436769 (2002-08-01), Kanamori
patent: 6510082 (2003-01-01), Le et al.
patent: 6580124 (2003-06-01), Cleeves et al.
patent: 6614686 (2003-09-01), Kawamura et al.
patent: 6631085 (2003-10-01), Kleveland et al.
patent: 6639836 (2003-10-01), Hung et al.
patent: 6646914 (2003-11-01), Haddad et al.
patent: 6657894 (2003-12-01), Yeh et al.
patent: 6670240 (2003-12-01), Ogura et al.
patent: 6690601 (2004-02-01), Yeh et al.
patent: 6771543 (2004-08-01), Wong et al.
patent: 6808986 (2004-10-01), Rao et al.
patent: 6826080 (2004-11-01), Park et al.
patent: 6862216 (2005-03-01), Hopper et al.
patent: 6873004 (2005-03-01), Han et al.
patent: 6881994 (2005-04-01), Lee et al.
patent: 6888750 (2005-05-01), Walker et al.
patent: 6972234 (2005-12-01), Madurawe et al.
patent: 6992349 (2006-01-01), Lee et al.
patent: 6992927 (2006-01-01), Poplevine et al.
patent: 6996011 (2006-02-01), Yeh et al.
patent: 7042763 (2006-05-01), Mirgorodski et al.
patent: 7072219 (2006-07-01), Yeh
patent: 7129538 (2006-10-01), Lee et al.
patent: 7196926 (2007-03-01), Kim
patent: 7203098 (2007-04-01), Mihnea et al.
patent: 7209384 (2007-04-01), Kim
patent: 7269062 (2007-09-01), Liao et al.
patent: 7283389 (2007-10-01), Liao et al.
patent: 7476925 (2009-01-01), Eldridge et al.
patent: 7491599 (2009-02-01), Tsai et al.
patent: 2002/0167844 (2002-11-01), Han et al.
patent: 2003/0032243 (2003-02-01), Ogura et al.
patent: 2007/0133258 (2007-06-01), Kim
patent: 2007/0133292 (2007-06-01), Liao et al.
patent: 2008/0117672 (2008-05-01), Kao et al.
patent: 2008/0117673 (2008-05-01), Kao et al.
patent: 2009/0173985 (2009-07-01), Lee et al.
Yeh, C.C., et al., “PHINES: A Novel Low Power Program/Erase, Small Pitch, 2-Bit per Cell Flash Memory,” Electron Devices Meeting, 2002. IEDM'02. Digest. International, Dec. 8-11, 2002, pp. 931-934.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Electrically isolated gated diode nonvolatile memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically isolated gated diode nonvolatile memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically isolated gated diode nonvolatile memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2621488

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.