Electrically erasable programmable read-only memory with an arra

Details Electrically erasable programmable read-only memory with an arra Electrically erasable programmable read-only memory with an arra

1995-08-09

1997-01-21

Nguyen, Viet Q.

Static information storage and retrieval

Systems using particular element

Semiconductive

36518501, 36518528, 36518529, 257314, G11C 700

Patent

active

055965237

ABSTRACT:
A floating gate tunneling metal oxide semiconductor transistor is formed on a semiconductive substrate as a cell of electrically erasable programmable read-only memory. The transistor includes a source and a drain spaced apart to define a channel region therebetween in the substrate. An insulated floating gate at least partially overlies the channel region and is capacitively coupled with the substrate. A control gate is insulatively disposed above the conductive layer and spans the channel region. The withstanding voltage of the drain is specifically set to range from a first voltage adapted to be applied to the drain during a read operation to a second voltage applied thereto for forcing the conductive layer to discharge.

REFERENCES:
patent: 5355332 (1994-10-01), Endoh et al.
patent: 5406524 (1995-04-01), Kawamura et al.
patent: 5416738 (1995-05-01), Shrivastava
patent: 5483484 (1996-01-01), Endoh et al.
IEEE Electron Device Letters, vol. 9, No. 11, Nov. 1988, pp. 588-590, Chi Chang, et al., "Drain-Avalanche and Hole-Trapping Induced Gate Leakage in Thin-Oxide MOS Devices".
IEEE Electron Device Letters, vol. 11, No. 11, Nov. 1990, pp. 514-516, Sameer Haddad, et al., "An Investigation of Erase-Mode Dependent Hole Trapping in Flash EEPROM Memory Cell".

Affiliated with

Also associated with

Rating

Electrically erasable programmable read-only memory with an arra does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically erasable programmable read-only memory with an arra, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically erasable programmable read-only memory with an arra will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2329470