Electrically erasable programmable read-only memory (EEPROM)...

Details Electrically erasable programmable read-only memory (EEPROM)... Electrically erasable programmable read-only memory (EEPROM)...

2008-08-15

2010-11-23

Le, Vu A (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185180

Reexamination Certificate

active

07839680

ABSTRACT:
In a method of reading data in an EEPROM cell, a bit line voltage for reading is applied to the EEPROM cell including a memory transistor and a selection transistor. A first voltage is applied to a sense line of the memory transistor. A second voltage greater than the first voltage is applied to a word line of the selection transistor. A current passing through the EEPROM cell is compared with a predetermined reference current to read the data stored in the EEPROM cell. An on-cell current of the EEPROM cell may be increased in an erased state and the data in the cell may be readily discriminated.

REFERENCES:
patent: 2006/0239079 (2006-10-01), Mokhlesi et al.
patent: 100170293 (1998-10-01), None
patent: 1020000038595 (2000-07-01), None
patent: 1020070012582 (2007-01-01), None
English Abstract for Publication No. 100170293, Oct. 14, 1998.
English Abstract for Publication No. 1020000038595, Jul. 5, 2000.
English Abstract for Publication No. 1020070012582, Jan. 26, 2007.

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