Electrically erasable programmable read only memory (EEPROM)...

Details Electrically erasable programmable read only memory (EEPROM)... Electrically erasable programmable read only memory (EEPROM)...

2007-09-18

2007-09-18

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S704000, C257SE21680

Reexamination Certificate

active

11328790

ABSTRACT:
Electrically erasable programmable read only memory (EEPROM) cells and methods of fabricating the same are provided. An EEPROM cell includes an isolation layer formed at a semiconductor substrate to define an active region. A source region, a buried N+ region and a drain region are serially disposed at the active region. A memory gate is disposed to cross-over the buried N+ region. A first channel region is formed between the source region and the buried N+ region. A tunnel region is located between the buried N+ region and the memory gate and self-aligned with the buried N+ region.

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