Electrically erasable programmable read only memory (EEPROM)...

Details Electrically erasable programmable read only memory (EEPROM)... Electrically erasable programmable read only memory (EEPROM)...

2006-03-28

2006-03-28

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S317000, C257S318000, C257S321000

Reexamination Certificate

active

07019354

ABSTRACT:
Electrically erasable programmable read only memory (EEPROM) cells and methods of fabricating the same are provided. An EEPROM cell includes an isolation layer formed at a semiconductor substrate to define an active region. A source region, a buried N+ region and a drain region are serially disposed at the active region. A memory gate is disposed to cross-over the buried N+ region. A first channel region is formed between the source region and the buried N+ region. A tunnel region is located between the buried N+ region and the memory gate and self-aligned with the buried N+ region.

REFERENCES:
patent: 6576950 (2003-06-01), Cappelletti et al.
patent: 6703670 (2004-03-01), Lines

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