Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-06-08
1997-01-07
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, 257384, 257757, 36518517, H01L 29788
Patent
active
055919995
ABSTRACT:
A semiconductor memory device according to the present invention comprises a plurality of electrically rewritable memory cells, each of which contains a drain and a source, at least one source line coupled to the sources of the memory cells through a contact hole, and bit lines arranged so as to avoid the contact hole.
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Japanese Journal of Applied Physics, vol. 30, No. 4, pp. 627-632, Apr. 1991, Jin-Yeong Kang, et al., "Fabrication and Operational Stability of Inverted Floating Gate E.sup.2 PROM (Electrically Erasable Programmable Read Only Memory)".
Miyamoto Junichi
Momodomi Masaki
Watanabe Toshiharu
Bowers Courtney A.
Kabushiki Kaisha Toshiba
Saadat Mahshid
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