Electrically erasable programmable read-only memory cell and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S321000

Reexamination Certificate

active

07408221

ABSTRACT:
A manufacturing method and a device of an EEPROM cell are provided. The method includes the following steps. First, a tunnel layer and an inter-gate dielectric layer are formed over a surface of a substrate respectively, and a doped region is formed in the substrate under the inter-gate dielectric layer and used as a control gate. Thereafter, a floating gate is formed over the inter-gate dielectric layer and the tunnel layer. Thereafter, a source region and a drain region are formed in the substrate beside two sides of the floating gate under the tunnel layer. Especially, the manufacturing method of the memory cell can be integrated with the manufacturing process of high operation voltage component and low operation voltage component.

REFERENCES:
patent: 5936276 (1999-08-01), Maurelli et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Electrically erasable programmable read-only memory cell and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically erasable programmable read-only memory cell and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically erasable programmable read-only memory cell and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3993138

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.