Electrically erasable programmable RAM

Static information storage and retrieval – Systems using particular element – Semiconductive

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365185, 357 235, G11C 1140

Patent

active

046566074

ABSTRACT:
In a semiconductor memory made up of semiconductor memory elements, each consisting of a transistor of an MOS structure which has a charge-storage layer and which is formed on a semiconductor substrate, the improvement wherein a switching element is provided so that positive or negative charge can be stored or discharged from the charge-storage layer in a mode for writing data, and the charge-storage layer can be allowed to float electrically when in a mode for reading data.

REFERENCES:
patent: 4507758 (1985-03-01), Moeschwitzer

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Electrically erasable programmable RAM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically erasable programmable RAM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically erasable programmable RAM will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1090369

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.