Electrically erasable floating-gate memory organized in words

Details Electrically erasable floating-gate memory organized in words Electrically erasable floating-gate memory organized in words

1999-03-24

2000-08-01

Dinh, Son T.

Static information storage and retrieval

Floating gate

Particular biasing

36518505, 36518523, G11C 1604

Patent

active

060976314

ABSTRACT:
A floating-gate type memory uses voltages that are low in terms of absolute value with a reliable and compact word selection device. The device is compatible with Flash-EEPROM type memories. An N type well transistor is used as a word selection transistor.

REFERENCES:
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patent: 5671176 (1997-09-01), Jang et al.
patent: 5801991 (1998-09-01), Keeney et al.
patent: 5818761 (1998-10-01), Onakado et al.
Miyamoto et al., "An Experimental 5-V-Only 256-kbit CMOS EEPROM With a High-Performance Single-Polysilicon Cell", IEEE Journal of Solid-State Circuits, vol. 21, No. 5, (Oct. 1986), pp. 852-860.

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